Back end of line

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The BEOL process deposits metalization layers on the silicion to interconnect the individual devices generated during FEOL (bottom).
CMOS fabrication process

While the term front end of line (FEOL) refers to the first portion of any IC fabrication where the individual devices are patterned in the semiconductor, back end of line (BEOL) comprises the subsequent deposition of metal interconnect layers. Thus, BEOL is the second portion of IC fabrication process where the individual devices (transistors, capacitors, resistors, etc.) get interconnected with wiring by deposited metalization layers.

Metalization[edit]

The individual devices are connected by alternately stacking oxide layers (for insulation purposes) and metal layers (for the interconnect tracks). The vias between layers and the interconnects on the individual layers are thus formed using a structuring process.[1]

Common metals are copper and aluminum. BEOL generally begins when the first layer of metal is deposited on the wafer. BEOL includes contacts, insulating layers (dielectrics), metal levels, and bonding sites for chip-to-package connections. For modern IC processes, more than 10 metal layers can be added in the BEOL.

Before 1998, practically all chips used aluminium for the metal interconnection layers, whereas copper is mostly used nowadays.[2]

Steps[edit]

Steps of the BEOL are:[1][3]

  1. Silicidation of source and drain regions and the polysilicon region.
  2. Adding a dielectric (first, lower layer is pre-metal dielectric (PMD) – to isolate metal from silicon and polysilicon), CMP processing it
  3. Make holes in PMD, make a contacts in them.
  4. Add metal layer 1
  5. Add a second dielectric, called the inter-metal dielectric (IMD)
  6. Make vias through dielectric to connect lower metal with higher metal. Vias filled by Metal CVD process.
    Repeat steps 4–6 to get all metal layers.
  7. Add final passivation layer to protect the microchip

After BEOL there is a "back-end process" (also called post-fab), which is done not in the cleanroom, often by a different company. It includes wafer test, wafer backgrinding, die separation, die tests, IC packaging and final test.

See also[edit]

References[edit]

  1. ^ a b J. Lienig, J. Scheible (2020). "Chap. 2.9.4: BEOL: Connecting Devices". Fundamentals of Layout Design for Electronic Circuits. Springer. p. 82. doi:10.1007/978-3-030-39284-0. ISBN 978-3-030-39284-0. S2CID 215840278.
  2. ^ "Copper Interconnect Architecture".
  3. ^ Karen A. Reinhardt and Werner Kern (2008). Handbook of Silicon Wafer Cleaning Technology (2nd ed.). William Andrew. p. 202. ISBN 978-0-8155-1554-8.

Further reading[edit]