File:FBH GaN High electron mobility transistor.jpg

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Summary

Description
English: GaN high electron mobility transistor
Date
Source Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik
Author FBH/P.Immerz
Permission
(Reusing this file)
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    • 20c: 22.25 mm, 0.88 in
    • 50c: 24.25 mm, 0.95 in
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    • €2: 25.75 mm, 1.01 in

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Captions

GaN High electron mobility transistor from the Ferdinand-Braun-Institut

Items portrayed in this file

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17 October 2011

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55 millimetre

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current13:26, 20 May 2020Thumbnail for version as of 13:26, 20 May 20204,752 × 3,168 (8.26 MB)FBHPRUploaded a work by FBH/P.Immerz from Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik with UploadWizard
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