MEMS sensor generations
 | This article relies largely or entirely on a single source. (February 2017) |
MEMS sensor generations represent the progress made in micro sensor technology and can be categorized as follows:
- 1st Generation
- MEMS sensor element mostly based on a silicon structure, sometimes combined with analog amplification on a micro chip.[1]
- 2nd Generation
- MEMS sensor element combined with analog amplification and analog-to-digital converter on one micro chip.
- 3rd Generation
- Fusion of the sensor element with analog amplification, analog-to-digital converter and digital intelligence for linearization and temperature compensation on the same micro chip.
- 4th Generation
- Memory cells for calibration- and temperature compensation data are added to the elements of the 3rd MEMS sensor generation.
References[edit]
- ^ Terry, S.C.; Jerman, J.H.; Angell, J.B. (December 1979). "A gas chromatographic air analyzer fabricated on a silicon wafer". IEEE Transactions on Electron Devices. 26 (12): 1880–1886. doi:10.1109/T-ED.1979.19791.