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Efficient Power Conversion

From Wikipedia, the free encyclopedia

Efficient Power Conversion (EPC) is a semiconductor company that produces transistors and integrated circuits based on gallium nitride (GaN).[1][2]

History

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The company was founded in 2007 by Alex Lidow, Joe Cao and Robert Beach, with Lidow continuing as CEO.[1] The company is based in El Segundo, California.[1] Its eGaN® FETs and ICs are widely used in the Light Detection and Ranging (Lidar) systems for self-driving and autonomous vehicles, such as the lidar systems developed by Velodyne.[2][3] In 2020, the company entered into a joint venture with VPT to form EPC Space[4] which provides radiation-hardened GaN devices for space applications.[5][6]

Products

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In 2023 the 40V 4mΩ radiation-hardened GaN FET EPC7001 was introduced.[7] The company launched the EPC2361, a 100V 1mΩ GaN FET in 2024, which it claims was the smallest available at the time with a footprint of 3mm by 5mm.[8]

References

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  1. ^ a b c Ungerleider, Neal (2015-09-23). "The Man On A Mission To Turn Silicon Valley Into Gallium Valley". Fast Company. Retrieved 2021-01-11.
  2. ^ a b "Move over, silicon. Gallium nitride chips are taking over". VentureBeat. 2015-04-02. Retrieved 2021-01-11.
  3. ^ "Velodyne LiDAR Announces Breakthrough Design for Miniaturized, Low-Cost Solid-State LiDAR Sensors". VentureBeat. 2016-12-13. Retrieved 2021-01-11.
  4. ^ Di Paolo Emilio, Maurizio. "GaN Transistor for Space Missions". EETimes.
  5. ^ "EPC and VPT, Inc. Announce Joint Venture – EPC Space – Targeting the Radiation Hardened Power Electronics Market for Mission Critical Applications". www.businesswire.com. 2020-06-16. Retrieved 2024-03-17.
  6. ^ "EPC and VPT Partner to Provide Power Conversion Solutions for High-Reliability Environments". EE Power. 2020-06-20. Retrieved 2024-03-17.
  7. ^ "Radiation-hardened GaN field-effect transistors (FETs) for power electronics in space introduced by EPC". militaryaerospace.com. 2023-09-08. Retrieved 2024-07-25.
  8. ^ "EPC launches first GaN FET with 1mΩ on-resistance". semiconductor-today.com. 2024-03-01. Retrieved 2024-07-25.