Talk:Drain-induced barrier lowering
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Explanation given based on the extension of the p-n junction's depletion region is very simplistic and does not account for what is happenning in a modern device. DIBL is a 2-D effect, coming from the competeion between din and gate to control the potential profile in the channel.
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[edit]Above objection is valid. In addition the article contains the incorrect statement that "depletion regions conduct". It also fails to describe the effects of DIBL upon the IV curves. I've rewritten the article, retaining only a few sentences. —Preceding unsigned comment added by Brews ohare (talk • contribs) 22:34, 13 November 2007 (UTC)