Talk:Gallium(III) oxide

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Preparation Section[edit]

This section needs work. The statement, "Epitaxial thin films of α-Ga2O3 can also be deposited on m-plane (10-10) and a-plane (11-20) sapphire substrates since they are perpendicular to the c-plane (0001), preventing c-plane faceting that can nucleate β-Ga2O3" is in correct.

α-Ga2O3 can be grown on c-plane sapphire. The referenced paper by Jinno et al., applies only to MBE grown films. α-Ga2O3 has been grown on c-plane sapphire by other techniques, such as Mist-CVD. To-date, α-Ga2O3 has not been grown on a-plane, to my knowledge.

"ε-Ga2O3...deposited by means of metalorganic vapor phase epitaxy" is correct but it has been grown by other techniques too.

Useage update needed[edit]

In 2012 the use of purified Ga was for GaAs devices. That is most certainly no longer valid. LED lighting uses GaN, LED dominates new lighting. 2019-2020 saw a massive growth in the use of GaN HEMT mosfets for 120-240V input power supplies. 2021 should see GaN HEMT mosfets exceed Si mosfets in volume. I'm looking for references that can confirm the split.

Suggestion to add change to applications and uses[edit]

I suggest an addition to the section.

The National Institute of Information and Communications Technology, in collaboration with Tamura Co., Ltd. and Koha Co., Ltd.[1] has developed and tested the world's first single-crystal gallium oxide (Ga2O3) field-effect transistors. Details were published online in "Applied Physics Letters" on Jan. 4, 2012.[2]


Below are the suggested cites.

  1. ^ "First Demonstration of New Semiconductor Gallium Oxide （Ga2O3） Transistors". National Institute of Information and Communications Technology. Retrieved 7/13/2012. {{cite web}}: Check date values in: |accessdate= (help)
  2. ^ Higashiwaki, Masataka (January 4, 2012). "Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates". Applied Physics Letters. 100 (1): 2. Retrieved July 13, 2012. {{cite journal}}: Unknown parameter |coauthors= ignored (|author= suggested) (help)CS1 maint: date and year (link)


Agreed that the applications needs to be updated. The reason why the material is gaining so much interest, is for applications in electronics. Namely, as a transistor for high-power applications. This is the reason why it's gained so much attention and so much investment internationally.

12,546 publications, patents, and reports and counting ... mentioning Ga2O3[edit]

WIth over 12,000 reports on the topic, we are forced to mainly rely on more general sources, as guided by WP:SECONDARY. Four heavily cited reviews:

  • Dai, Z. R., Pan, Z. W., Wang, Z. L., "Novel nanostructures of functional oxides synthesized by thermal evaporation", Adv. Funct. Mater. 2003, 13, 9. 10.1002/adfm.200390013
  • Dumbaugh, W. H., Lapp, J. C., "Heavy-metal oxide glasses", J. Am. Ceram. Soc. 1992, 75, 2315. 10.1111/j.1151-2916.1992.tb05581.x
  • Zhai, T., Fang, X., Liao, M., Xu, X., Zeng, H., Yoshio, B., Golberg, D., "A comprehensive review of one-dimensional metal-oxide nanostructure photodetectors", Sensors 2009, 9, 6504. 10.3390/s90806504
  • Ohta, H., Nomura, K., Hiramatsu, H., Ueda, K., Kamiya, T., Hirano, M., Hosono, H., "Frontier of transparent oxide semiconductors", Solid-State Electron. 2003, 47, 2261. 10.1016/S0038-1101(03)00208-9

--Smokefoot (talk) 18:20, 20 February 2015 (UTC)[reply]

Commercial applications[edit]

Used in mercury-free thermometers to keep galistan from wetting the glass. Or is that plain gallium oxide? — Preceding unsigned comment added by 98.165.88.158 (talk) 10:18, 27 July 2020 (UTC)[reply]


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