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As a functional aspect

Functionally, memory span is to measure the number of discrete units over which the individual can successively distribute his attention and still organize them into a working unit. To generalize, it refers to the ability of an individual to reproduce immediately, after one presentation, a series of discrete stimuli in their original order.

Experiments in memory span have found that the more familiar a person is with the type of subject matter presented to them, the more they will remember it in a novel setting. For example, a person will better remember a sequence in their first-language than their second-language; a person will also remember a sequence of words better than they would a sequence of nonsense syllables.

According to a theory by Alan Baddeley and Graham Hitch, working memory is under the influence of three key mechanisms: the visuospatial sketchpad, the central executive, and the phonological loop. A mechanism called the episodic buffer was later added to the model. The phonological loop is the mechanism that facilitates learning and memory by storing information (in the articulatory loop) and refreshing or rehearsing it it our memory (in the acoustic store). The phonological similarity effect is when items in a list have similar features (e.g. similar sound), they are more difficult to remember. Likewise, the more different the items in a list are, the easier it is to recall them.

Digit-Span Tasks

A digit-span task is used to measure working memory's number storage capacity. Participants see or hear a sequence of numerical digits and are tasked to recall the sequence correctly, with increasingly longer sequences being tested in each trial. The participant's span is the longest number of sequential digits that can accurately be remembered. Digit-span tasks can be given forwards or backwards, meaning that once the sequence is presented, the participant is asked to either recall the sequence in normal or reverse order. Digit-span tasks are the most commonly used test for memory span, partially because performance on a digit-span task cannot be affected by factors such as semantics, frequency of appearance in daily life, complexity, etc.

Memory span
This is a graphical representation of typical results that might be obtained from performing a forward/backward digit span recall task on participants in several different age groups. The numbers on the y-axis indicate number of digits successfully recalled.
MeSH	D011581

Verbal working memory is involved in many everyday tasks, such as remembering a friend's telephone number while entering it into a phone and understanding long and difficult sentences. Verbal working memory is also thought to be one of the elements underlying intelligence (often referred to as 'IQ,' meaning "intelligence quotient"); thus, the digit span task is a common component of many IQ tests, including the widely used Wechsler Adult Intelligence Scale (WAIS). Performance on the digit span task is also closely linked to language learning abilities; improving verbal memory capacities may therefore aid mastery of a new language.

Intrinsic factors

There are certain intrinsic factors specific to each individual that may affect the extent, or span, of one's working memory.

Age

An individual's age affects their working memory span. When an individual is developing during childhood and adolescence, memory span improves with age. After adulthood is reached, memory span slowly decreases as an individual progresses towards old age. The decline in memory span with old age has been associated with a decrease of working memory storage and processing, and the age-difference in working memory becomes greater as the memory tasks performed become more difficult. Generally, the decline in working memory and memory span tasks in old age is attributed to a decline in overall cognitive control. One of the key aspects of working memory is the ability to inhibit distractions and to focus on stimulus cues, thus as a person ages, these abilities diminish, which reduces memory.

Notes for Editing Article

Potential Sources to Reference:

Bold denotes that the source has been incorporated into the article.

Phonological similarity in working memory span tasks. Chow et. al.

Consolidating working memory: Distinguishing the effects of consolidation, rehearsal and attentional refreshing in a working memory span task. Bayliss et. al.

Questioning short-term memory and its measurement: Why digit span measures long-term associative learning. Jones et. al.

Interference due to shared features between action plans is influenced by working memory span. Fournier et. al.

The effects of processing speed and memory span on working memory. Kunimi et. al.

The effects of age on processing and storage in working memory span tasks and reading comprehension. Schroder, Paul J.

Mechanisms of age-related decline in memory search across the adult life span. Hills et. al.

A test of the integrity of the components of Baddeley’s model of working memory in attention-deficit/hyperactivity disorder (ADHD). Karatekin, Canan.

Areas of focus/goals in Memory Span article:

Intrinsic Factors: Add information about what other factors may affect memory span. Consolidate info that is already present.

Digit-Span Tasks: Re-write to get rid of plagiarism. Fill in areas that are unclear (e.g. phonological loop section).