User talk:Rsrsekhar

  Pothala Reddi Sekhar Reddy (Dr P R Sekhar Reddy), Born in 1990, S/o P. Vasudeva Reddy, Yelakapalle (Vi), Chembakur (Post), Ramasamudram (Mandal), Chittoor (Dt), Andhra Pradesh- 517417, India. 10th class, ZPHS high school, chembakur Intermediate, Govt Jr college, Ramasamudram B. Sc. Physics, Electronics, Mathematics, S.V. Arts College, Tirupati, India, June 2008- April 2011 M. Sc. Physics, Sri Venkateshwara University, India, June 2012- April 2014 Ph. D. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Jeonbuk National University, South Korea, March 2015-Feb 2020 Currently working in Postdoctoral Researcher, School of Material Science and Engineering, Pusan National University, South Korea, March 2020

Web Links https://sites.google.com/view/neemlab https://orcid.org/0000-0002-2301-7636 https://scholar.google.com/citations?hl=en&user=pImpZysAAAAJ

Research Experience: Deposition of material oxide thin films such as Sm2O3, La2O3, Fe2O3, CuO, BiFeO3, SnO2, and NiO., etc. Characterization techniques like XRD, SEM, TEM, AFM, Raman, UV-Visible Spectroscopy, Current- Voltage, Capacitance-Voltage and Low-frequency noise other properties using semiconductor parameter analyzer. Dielectric materials and Ferroelectric properties of HfO2, ZrO2, and Al2O3 based materials

Patent and Awards: IEEE Journal of Semiconductor Technology and Science Grand Prize in Haedong Best Paper award Nov-27-2020 (IEIE JSTS, 16, 5, (2016))

List of First Author Publications (2015-2020): 1. Temperature-Dependent Schottky barrier characteristics of Al/n-type Si Schottky Diode with Au-Cu phthalocyanine Interlayer P.R. Sekhar Reddy, V. Janardhanam, Kyu-Hwan Shim, Sung-Nam Lee, A. Ashok Kumar, V. Rajagopal Reddy and Chel Jong Choi Thin Solid Films (2020)

2. Schottky Barrier Parameters and Low-Frequency Noise Characteristics of Au/Ni Contact to n-type β-Ga2o3 P.R. Sekhar Reddy, V. Janardhanam, Hoon-Ki Lee, Kyu-Hwan Shim, Sung-Nam Lee, V. Rajagopal Reddy, Chel-Jong Choi Journal of Electronic Materials 49, (2020) 297-305.

3. Temperature-Dependent Schottky Barrier Parameters of Ni/Au on n-Type (001) β-Ga2O3 Schottky Barrier Diode P.R. Sekhar Reddy, V. Janardhanam, Kyu-Hwan Shim, V. Rajagopal Reddy, Sung-Nam Lee and Chel-Jong Choi Vacuum 171 (2020), 109012

4. Effect of Copper Phthalocyanine Thickness on Surface Morphology, Optical and Electrical Properties of Au/CuPc/n-Si Heterojunction P.R. Sekhar Reddy, V. Janardhanam, I. Jyothi, Han-Soo Chang, Sung-Nam Lee, V. Rajagopal Reddy, Chel- Jong Choi Applied Physics A: Materials Science and Processing 124 (2018) 115.

5. Microstructural and Electrical Properties of Al/N-Type Si Schottky Diodes with Au-CuPc Composite Films as Interlayer P.R. Sekhar Reddy, V. Janardhanam, I. Jyothi, Han-Soo Chang, Sung-Nam Lee, V. Rajagopal Reddy, Chel- Jong Choi Superlattices and Microstructures 111 (2017) 506-517.

6. Modification of Electrical Properties of Ti/p-Type InP Schottky Diode by Polyaniline (PANI) Organic Interlayer P.R. Sekhar Reddy, V. Janardhanam, I. Jyothi, Shim-Hoon Yuk, V. Rajagopal Reddy, Jae-Chan Jeong, Sung- Nam Lee, and Chel-Jong Choi Journal of Semiconductor Technology and Science 16 (2016) 664-674.

List of Co-Author Publications (2016 -2021): 1. Study Domains and Domains Dynamics in Fluorite-Structure Ferroelectrics

  Dong-Hyun Lee, Young Hwan Lee, Kun Yang, Ju-Yong Park, P.R. Sekhar Reddy, Thomas Mikolajick, Jacob Jones, Uwe Schroeder, and Min Hyuk Park (Under review )2021.

2. A Perspective on Semiconductor Devices Based on Fluorite Structured Ferroelectrics from The Materials-Device Integration Perspective

  Ju Yong Park, Kun Yang, Dong Hyun Lee, Se Hyun Kim, Younghwan Lee, P. R. Sekhar Reddy, Jacob L. Jones, and Min Hyuk Park Journal of Applied Physics 128 24 (2021).

3. CoCu2O4 nanoflowers architecture as an electrode material for battery type supercapacitor with improved electrochemical performance

 Young-Seok Lee, Yedluri Anil Kumar, Sangaraju Sambasivam, Shamim Ahmed Hira, Kamran Zeb, Waqar Uddin, P.R. Sekhar Reddy,  Kulurumotlakatla Dasha Kumar,  Ihab M. Obaidat,  Hee-Je Kim, SungshinKim
 Nano-Structure & Nano-objects, 24 (2020) 100618.

4. A Study of Gate Leakage current on AlGaN/GaN MOS-HEMTs with atomic layer deposited Al2O3 gate oxide

 K. Ouduangvilai, H.-K. Lee, V. Janardhanam, P.R. Sekhar Reddy, Chel-Jong Choi, Kyu-Hwan Shim
 Journal of Semiconductor Technology and Science 19 6 (2019) 540-550.

5. Structural, Chemical, and Electrical Properties of Au/La2O3/n-GaN MIS Junction with a High-k Lanthanum Oxide Insulating Layer

  M. Uma, N. Balaram, P. R. Sekhar Reddy, V. Janardhanam, V. Rajagopal Reddy, Hyung-Joong Yun, Sung- Nam Lee, And Chel-Jong Choi
  Journal of Electronic Materials 48 7 (2019) 4217-4225.

6. Double Gaussian Barrier Distribution of Permalloy (Ni0.8Fe0.2) Schottky Contacts to n-type GaN

  V. Janardhanam, I. Jyothi, P. R. Sekhar Reddy, Jae-Hee Cho, Jeong-Mook Cho, Chel-Jong Choi, Sung- Nam Lee, V. Rajagopal Reddy
  Superlattices and Microstructures 120 (2018) 508–516. 

7. Microstructural, chemical states and electrical properties of Au/CuO/n-InP Heterojunction with a Cupric Oxide Interlayer

  N. Balaram, V. Rajagopal Reddy, P. R. Sekhar Reddy, V. Janardhanam, Chel-Jong Choi,
  Vacuum 152 (2018) 15-24.

8. Electrical and Frequency-Dependent Properties of Au/Sm2O3/n-Gan MIS Junction with A High-K Rare- Earth Sm2O3 As Interlayer

  V. Manjunath, V. Rajagopal Reddy, P. R. Sekhar Reddy, V. Janardhanam, Chel-Jong Choi,
  Current Applied Physics 17 (2017) 980-988.

9. Microstructural, Electrical, and Carrier Transport Properties of Au/NiO/n-GaN Heterojunction with a Nickel Oxide Interlayer

  V. Rajagopal Reddy, P. R. Sekhar Reddy, I. Neelakanta Reddy and Chel-Jong Choi
  RSC Advances 6 (2016) 105761

Invited Talk at International Worship:

1. Future Semiconductor Materials and Devices, 2018 August 24-30 High Reverse Breakdown Voltage Schottky Rectifiers on Gallium oxide (β-Ga2O3) P. R. Sekhar Reddy, Chel-Jong Choi

International and National Conferences:

1. 18th International conference on sustainable energy technologies (SET-2019) August20-22, Kuala lumper, Malesia Abstract title: High Voltage β-Ga2O3 Schottky Barrier Diode for Improved Energy Efficiency P. R. Sekhar Reddy, V. Janardhanam and Chel-Jong Choi.

2. International conference on composite materials Science and Technology (ICCMST) April 6-8 Thailand, Bangkok 2018 Abstract title: Modification of Schottky Barrier Parameters of Al/n-type Si Schottky Rectifiers Using Au- CuPc Nanocomposite Film as Interlayer P. R. Sekhar Reddy, V. Janardhanam, V. Rajagopal Reddy, Chel-Jong Choi.

3. International Union of Materials Research Societies-International Conference on electronic materials (IUMRS) August 20-24, Daejeon, Korea 2018 Abstract Title: Rapid Thermal Annealing Effects on Structural, Optical and Electrical Properties of Au/Cupc/n-Si Schottky Diode P. R Sekhar Reddy, V. Janardhanam, Jyothi. I, V. Rajagopal Reddy, Shim-Hoon Yuk Chel-Jong Choi.

6. 16th Korea Institute of Ceramic Engineering & Technology, May 16, Jinju City, Korea 2019 Abstract Title: Formation of Au-CuPc Nanocomposite Film and Their Application to Schottky Diodes P. R. Sekhar Reddy, V. Janardhanam and Chel-Jong Choi.

5. The Korean Institute of Electrical and Electronic Material Engineers (KIEEME) 2018, June 20-22, Korea Abstract title: Temperature-Dependent Electrical Properties of Ti/Au Ohmic Contacts on Sn-doped β-Ga2O3 Semiconductor P. R. Sekhar Reddy, V. Janardhanam, Shim-Hoon Yuk, Deok-Ho Cho, Kyu-Hwan Shim, Chel-Jong Choi

web links

https://sites.google.com/view/neemlab https://orcid.org/0000-0002-2301-7636 https://scholar.google.com/citations?hl=en&user=pImpZysAAAAJ

Concern regarding Draft:Dr. P. R. Sekhar Reddy

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Your draft article, Draft:Dr. P. R. Sekhar Reddy

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Thanks for your submission to Wikipedia, and happy editing. Liz ^{Read! Talk!} 14:59, 15 January 2022 (UTC)