Talk:Dopant activation

This is the talk page for discussing improvements to the Dopant activation article.
This is not a forum for general discussion of the article's subject.

Put new text under old text. Click here to start a new topic.
New to Wikipedia? Welcome! Learn to edit; get help.

Article policies

Find sources: Google (books · news · scholar · free images · WP refs) · FENS · JSTOR · TWL

Articles for creation

	This article was reviewed by member(s) of WikiProject Articles for creation. The project works to allow users to contribute quality articles and media files to the encyclopedia and track their progress as they are developed. To participate, please visit the project page for more information.Articles for creationWikipedia:WikiProject Articles for creationTemplate:WikiProject Articles for creationAfC articles
	This article was accepted on 28 January 2011 by reviewer CharlieEchoTango (talk · contribs).

Electronics

	Electronics portal This article is part of WikiProject Electronics, an attempt to provide a standard approach to writing articles about electronics on Wikipedia. If you would like to participate, you can choose to edit the article attached to this page, or visit the project page, where you can join the project and see a list of open tasks. Leave messages at the project talk pageElectronicsWikipedia:WikiProject ElectronicsTemplate:WikiProject Electronicselectronic articles
???	This article has not yet received a rating on the project's importance scale.

Dopant deactivation and Microelectronics Longevity[edit]

There is apparently a process called Dopant Deactivation. I am uncertain whether this is necessarily associated with the aging of microelectronics. Co-implantation strategies (of other dopants) are indicated as one method of reducing deactivation during annealing (http://swamp.mse.ufl.edu/dissertations/clark_m.pdf). I am uncertain as to whether the deactivation that occurs during annealing (assumed to be part of manufacture) is the same as the deactivation that occurs with aging. I am uncertain of whether Electrical (or Electromagnetic) field induced strain over a prolonged period of time can cause anything that might be termed 'Dopant deactivation'. Would it be correct in this case to say that the dopant atoms somehow separate from the rest of the Silicon in such a way as to alter the electrical properties of the microelectronic silicon? Could more advanced co-implantation strategies help to prevent Dopant Deactivation? It would seem clear that the use of multiple co-implanted dopants would significantly alter the electronic properties/'crystalline' structure of the silicon-dopant 'crystal'. I think that the article should mention that Dopant Deactivation is a possible cause of microelectronics failure/aging (if, indeed, it is!). ASavantDude (talk) 22:33, 25 January 2017 (UTC)[reply]

capitalization[edit]

In this edit I adjusted the capitalization in the lead to conform both with the article title and this cited source, but @MeadeIndeed reverted, asserting, "the spelling is correct." Rather than simply undo that good-faith revert, I am asking the input of other editors. ~T P W 13:38, 29 July 2023 (UTC)[reply]

I looked at several different articles in a similar vein to the one in question and I made a mistake in reverting the capitalization as in this case it was indeed accurate. I've gone ahead and undid my revert. I apologise for my mistake, @True Pagan Warrior. MeadeIndeed (talk) 20:32, 29 July 2023 (UTC)[reply]