Talk:High-κ dielectric

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Complete rewrite[edit]

Old article was a mess. I took out the way-too-long list of binary high-k candidates and took out rumors about this and that company using high-k materials. I also added material on oxynitride gate dielectrics but it needs citations. Irene Ringworm 05:04, 5 February 2007 (UTC)[reply]

This article is fantastic. Way to go Ms. Ringworm. Alexa411 18:20, 17 May 2007 (UTC)[reply]

yet again I suspect supression of tech...I came here looking for materials that are High-K dialectrics and instead the article talks about silicon gates. this is THE last time i'm using wikipedia, goodbye. I am done arguing with you people. 90.206.228.193 (talk) 18:07, 18 February 2010 (UTC)[reply]

Where it says "Defect states can be measured for example by using zero-bias thermally stimulated current, zero-temperature-gradient zero-bias thermally stimulated current spectroscopy,[3][4] or inelastic electron tunneling spectroscopy (IETS)." "Zero-bias thermally stimulated current" appears twice. Is there enough of a difference between "zero-bias thermally stimulated current" and "zero bias thermally stimulated current spectroscopy" that the whole five words needs to be in there twice? I'm no expert on such things. Featherwinglove (talk) 21:23, 20 January 2014 (UTC)[reply]

Intel's announcement 2007[edit]

I have stuck a current tag on the article in light of Intel's press release that they will incorporate high-k dielectrics in their chips. I guess it should stay for a week or so, or at least until further technical details become clear (which compound of Hf?...) 212.2.177.248 11:16, 28 January 2007 (UTC)[reply]

Name[edit]

How to pronounce the name High-κ? "high-k" or "high-kappa"?
What about renaming this article to "High-κ Dielectrics"?

Pronunciation is "High-kay", can clarify in main article. I'm okay with the renaming. Irene Ringworm 00:56, 14 January 2007 (UTC)[reply]

Oppose renaming. In my experience, electrical engineers call the relative dielectric constant 'k', not 'κ' (and pronounce the name accordingly). --Smack (talk) 18:39, 18 January 2007 (UTC)[reply]

I also oppose renaming and would further add that all the uses of 'κ' be replaced with 'k'. Wikipedia seems to be the only one perpetuating that convention. I'll checkl back in a couple days. If no objection I'll do it. Alexa411 18:19, 17 May 2007 (UTC)[reply]

I boldly made the change. There's no stopping me now! Alexa411 20:02, 21 May 2007 (UTC)[reply]

Now the article is inconsistent with its title. Relative permittivity says it is denoted ε_r(ω) (sometimes κ or K) ⇐ no mention of lowercase Latin k. Is there a standard and what does it say?--90.186.128.45 (talk) 00:01, 8 May 2010 (UTC)[reply]

New reader reading this for the first time. In the section that discusses the Gate Threshold Voltage, "V subscript T", it mentions the value "kT". I presume that the k in "kT" is the boltzman constant? I was slightly confused because k is also being used as the (relative?) dielectric constant. Is it worth indicated that this is a different type of k? —Preceding unsigned comment added by 195.224.204.202 (talk) 07:46, 20 September 2007 (UTC)[reply]

Add other applications[edit]

Can somebody please extend the application/use section to include other common uses of high-k materials such as for capacitors and electricity storage devices. —Preceding unsigned comment added by 66.46.103.18 (talk) 18:31, 21 May 2008 (UTC)[reply]

Cookies required?[edit]

Why do two of the references have the wording "Cookies required"? This tells us nothing about the content. DFH (talk) 10:39, 14 January 2009 (UTC)[reply]

Grossly out of date[edit]

The complaint about this article being "grossly out of date" is itself grossly out of date. Why hasn't this article been substantially edited in seven years? I thought wikipedia is supposed to have very updated articles. — Preceding unsigned comment added by 50.162.29.18 (talk) 16:38, 14 March 2014 (UTC)[reply]

What's this nonsense about the "current" 90-nanometer process and a "potential" high-k process? We're at 45nm now, which is a high-k process for those of you who haven't been paying attention. —Preceding unsigned comment added by 98.207.48.193 (talk) 03:58, 1 December 2009 (UTC)[reply]

Higher gate capacitance is desirable??[edit]

My memory on this is rusty, but as I remember, gate capacitance should be low, such as the previous stage doesn't need to pump a lot of current to fill this cap. As I understand it, high-k provides for lower leakage (desired), at the possible _expense_ of higher capacitance.

Also, the picture shows high-k dielectric at 3nm, thicker than traditional SiO2 1,2nm.

Please take a look... —Preceding unsigned comment added by 95.76.30.38 (talk) 21:03, 24 December 2009 (UTC)[reply]

How is high-k?[edit]

What range of K constitutes high K? Is 50 high K? 100? 1000? There must be at least a rough cut-off. — Preceding unsigned comment added by 192.12.184.6 (talk) 22:04, 9 July 2012 (UTC)[reply]

Needs rewriting for clarity and redefinition.[edit]

To anyone who can be arsed to clean this mess up:

1. 'High-k dielectric' is a simple electronic material property. I was taught at university that it commonly refers to a material with at least an order of magnitude greater permittivity than free space or equivalently, a k factor of 10 or more. This term has been used in reference to various metal oxides and glasses for a very long time.

2. The microelectronics industry has a special definition which is solely used in Si based electronics such as MOSFET gates. Please see: http://www.semi1source.com/notes/ViewFile.asp?Which=30 Quote: / In Si technology the reference is a value of k of silicon dioxide, SiO2, which is 3.9. Dielectrics featuring k>3.9 are referred to as “high”-k dielectric while dielectric featuring k<3.9 are defined as “low”-k dielectrics. / So basically, in this context 'high-k' refers to 'higher k than SiO2'.

Good luck!

Whoever deleted the original list should hang his head in shame. I suspect that he ran a google search and since the only results he could be bothered to look at were only talking about gate dielectrics, he assumed that this was its only meaning.

Coolplasma (talk) 02:39, 5 September 2012 (UTC)[reply]

Article rename[edit]

Reason: real name of technology with κ not k (redirect will take care of it)

got:

"High-k dielectric" cannot be moved to "High-κ dielectric", because the title "High-κ dielectric" is on the title blacklist.

Maybe best to keep unchanged even if an exception is allowed? Doesn't matter much to me. comp.arch (talk) 10:05, 20 September 2013 (UTC)[reply]

Disputed unsourced statement[edit]

Silicon dioxide has been used as a gate oxide material for decades. As transistors have decreased in size, the thickness of the silicon dioxide gate dielectric has steadily decreased to increase the gate capacitance and thereby drive current, raising device performance

The gate (width) size has decrease, but the corresponding increase in gate capacitance is not desired, and does not give better performance - it gives higher switching losses. — Preceding unsigned comment added by 83.100.174.82 (talk) 17:15, 12 June 2015 (UTC)[reply]

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